BLF183XR_15 datasheet(8/15 Pages) PHILIPS

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BLF183XR_BLF183XRS

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Product data sheet

Rev. 2 — 22 May 2015

8 of 15

NXP Semiconductors

BLF183XR; BLF183XRS

Power LDMOS transistor

VDS = 50 V; f = 108 MHz; tp = 100 s;  =20 %.

(1) IDq =20mA

(2) IDq = 100 mA

(3) IDq = 200 mA

(4) IDq = 400 mA

(5) IDq = 600 mA

(6) IDq = 800 mA

(7) IDq = 1000 mA

(8) IDq = 1200 mA

VDS = 50 V; f = 108 MHz; tp = 100 s;  =20%.

(1) IDq =20mA

(2) IDq = 100 mA

(3) IDq = 200 mA

(4) IDq = 400 mA

(5) IDq = 600 mA

(6) IDq = 800 mA

(7) IDq = 1000 mA

(8) IDq = 1200 mA

Fig 7.

Power gain as a function of output power;

typical values

Fig 8.

Drain efficiency as a function of output power;

typical values

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