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BLF174XR Datasheet(PDF) 7 Page - NXP Semiconductors |
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BLF174XR Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page BLF174XR_BLF174XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 1 — 25 June 2013 7 of 13 NXP Semiconductors BLF174XR; BLF174XRS Power LDMOS transistor VDS = 50 V; f = 108 MHz. (1) IDq = 100 mA (2) IDq = 200 mA (3) IDq = 300 mA (4) IDq = 400 mA (5) IDq = 500 mA VDS = 50 V; f = 108 MHz. (1) IDq = 100 mA (2) IDq = 200 mA (3) IDq = 300 mA (4) IDq = 400 mA (5) IDq = 500 mA Fig 6. Power gain as a function of output power; typical values Fig 7. Drain efficiency as a function of output power; typical values IDq = 100 mA; f = 108 MHz. (1) VDS =25V (2) VDS =30V (3) VDS =35V (4) VDS =40V (5) VDS =45V (6) VDS =50V IDq = 100 mA; f = 108 MHz. (1) VDS =25V (2) VDS =30V (3) VDS =35V (4) VDS =40V (5) VDS =45V (6) VDS =50V Fig 8. Power gain as a function of output power; typical values Fig 9. Drain efficiency as a function of output power; typical values |
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Similar Description - BLF174XR_15 |
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