BLF10M6160_BLF10M6LS160

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© NXP Semiconductors N.V. 2014. All rights reserved.

Product data sheet

Rev. 1 — 24 June 2014

2 of 12

NXP Semiconductors

BLF10M6160; BLF10M6LS160

Power LDMOS transistor

2.

Pinning information

[1]

Connected to flange.

3.

Ordering information

4.

Limiting values

[1]

Continuous use at maximum temperature will affect reliability.

5.

Thermal characteristics

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

BLF10M6160 (SOT502A)

1drain

2gate

3source

[1]

BLF10M6LS160 (SOT502B)

1drain

2gate

3source

[1]

3

2

1

sym112

1

3

2

3

2

1

sym112

1

3

2

Table 3.

Ordering information

Type number

Package

Name Description

Version

BLF10M6160

-

flanged ceramic package; 2 mounting holes; 2 leads

SOT502A

BLF10M6LS160

-

earless flanged ceramic package; 2 leads

SOT502B

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

65

V

gate-source voltage

0.5

+13

V

storage temperature

65

+150

C

junction temperature

[1] -

225

C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Type

Typ

Unit

junction to case

BLF10M6160

0.5

K/W

BLF10M6LS160

0.44 K/W