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BQ24031-Q1 Datasheet(PDF) 6 Page - Texas Instruments |
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BQ24031-Q1 Datasheet(HTML) 6 Page - Texas Instruments |
6 / 35 page bq24030-Q1 bq24031-Q1 SLUS793B – APRIL 2008 – REVISED OCTOBER 2009.................................................................................................................................................... www.ti.com ELECTRICAL CHARACTERISTICS (continued) over junction temperature range (0°C ≤ TJ ≤ 125°C) and recommended supply voltage range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Charge Termination Detection Charge termination I(TERM) VI(BAT) < V(RCH), I(TERM) = (K(SET) × V(TERM))/RSET 10 150 mA detection range AC-charge termination V(TERM-AC) detection voltage, VI(BAT) > V(RCH) , PSEL = high, ACPG = low 235 250 265 mV measured on ISET1 USB-charge termination VI(BAT) > V(RCH), V(TAPER-USB) detection voltage, 95 100 130 mV PSEL = low or PSEL = high and ACPG = high measured on ISET1 Deglitch time for tFALL = 100 ns, 10-mV overdrive, TDGL(TERM) 22.5 ms termination detection ICHG increasing above or decreasing below threshold Temperature Sense Comparators VLTF High voltage threshold Temperature fault at V(TS) > VLTF 2.465 2.500 2.535 V VHTF Low voltage threshold Temperature fault at V(TS) < VHTF 0.485 0.500 0.515 V Temperature sense current ITS 94 100 106 μA source Deglitch time for R(TMR) = 50 kΩ, VI(BAT) increasing or decreasing above TDGL(TF) temperature fault 22.5 ms and below; 100-ns fall time, 10-mV overdrive detection(14) Battery Recharge Threshold Recharge threshold VO(BAT-REG) VO(BAT-REG) VO(BAT-REG) VRCH V voltage – 0.075 – 0.100 – 0.125 Deglitch time for recharge R(TMR) = 50 kΩ, VI(BAT) increasing or decreasing below TDGL(RCH) 22.5 ms detection(14) threshold, 100-ns fall time, 10-mV overdrive STAT1, STAT2. ACPG, USBPG Open-Drain (OD) Outputs(15) Low-level output saturation VOL IOL = 5 mA, External pullup resistor ≥ 1 kΩ required 0.25 V voltage ILKG Input leakage current 1 5 μA ISET2, CE Inputs VIL Low-level input voltage 0 0.4 V VIH High-level input voltage 1.4 IIL Low-level input current, CE –1 μA High-level input current, IIH 1 μA CE Low-level input current, IIL VISET2 = 0 V –20 μA ISET2 High-level input current, IIH VISET2 = VCC 40 μA ISET2 IIL1 Low-level input current 6 1 μA IIH1 High-level input current 15 μA t(CE-HLDOFF) Holdoff time, CE CE going low only 3.3 6.2 ms PSEL Input VIL Low-level input voltage Falling high →low, 280 kΩ ± 10% applied when low 0.975 1 1.025 V VIH High-level input voltage Input RPSEL sets external hysteresis VIL + 0.01 VIL + 0.024 V Low-level input current, IIL –1 μA PSEL High-level input current, IIH μA PSEL (14) All deglitch periods are a function of the timer setting and is modified in DPPM or thermal regulation modes by the percentages that the program current is reduced. (15) See Charger Sleep mode for ACPG (VCC = VAC) and USBPG (VCC = VUSB) specifications. 6 Submit Documentation Feedback Copyright © 2008–2009, Texas Instruments Incorporated Product Folder Link(s): bq24030-Q1 bq24031-Q1 |
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