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BLF8G24LS-150V Datasheet(PDF) 10 Page - NXP Semiconductors |
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BLF8G24LS-150V Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 16 page BLF8G24LS-150V_8G24LS-150GV All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 3 — 12 May 2014 10 of 16 NXP Semiconductors BLF8G24LS-150(G)V Power LDMOS transistor VDS = 28 V; IDq = 1300 mA. (1) f = 2305 MHz (2) f = 2350 MHz (3) f = 2395 MHz Fig 18. Input return loss as a function of output power; typical values VDS = 28 V; IDq = 1300 mA. (1) f = 2305 MHz (2) f = 2350 MHz (3) f = 2395 MHz VDS = 28 V; IDq = 1300 mA. (1) f = 2305 MHz (2) f = 2350 MHz (3) f = 2395 MHz Fig 19. Adjacent channel power ratio (5 MHz) as a function of output power; typical values Fig 20. Adjacent channel power ratio (10 MHz) as a function of output power; typical values |
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