BLF7G27L-75P_BLF7G27LS-75P

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Product data sheet

Rev. 2 — 14 July 2010

6 of 13

NXP Semiconductors

BLF7G27L-75P; BLF7G27LS-75P

Power LDMOS transistor

7.4 Single carrier W-CDMA

3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.

Channel bandwidth is 3.84 MHz.

Fig 9.

Single carrier W-CDMA power gain and drain

efficiency as function of load power;

typical values

Fig 10. Single carrier W-CDMA power gain and drain

efficiency as function of load power;

typical values

040

30

10

20

001aam256

16.8

17.2

16.4

17.6

18.0

(dB)

(%)

16.0

20

30

10

40

50

0

040

30

10

20

001aam257

16.8

17.2

16.4

17.6

18.0

(dB)

(%)

16.0

20

30

10

40

50

0

Fig 11. Single carrier W-CDMA ACPR at 5 MHz and at

10 MHz as function of load power;

typical values

Fig 12. Single carrier W-CDMA ACPR at 5 MHz and at

10 MHz as function of load power;

typical values

040

30

10

20

001aam258

−50

−40

−60

−30

−20

ACPR

(dBc)

−70

040

30

10

20

001aam259

−50

−40

−60

−30

−20

ACPR

(dBc)

−70