1.

Product profile

1.1 General description

160 W LDMOS power transistor for base station applications at frequencies from

1800 MHz to 2050 MHz, also suitable for operation at 1495 MHz to 1511 MHz.

[1]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;

carrier spacing 5 MHz.

[2]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.

1.2 Features and benefits

(RoHS)

1.3 Applications

2050 MHz frequency range

BLF7G21L-160P;

BLF7G21LS-160P

Power LDMOS transistor

Rev. 3 — 10 February 2014

Product data sheet

Table 1.

Typical performance

Mode of operation

f



D

ACPR

(MHz)

(mA)

(V)

(W)

(dB)

(%)

(dBc)

2-carrier W-CDMA

1930 to 1990

1080

28

45

18

34

30 [1]

1-carrier W-CDMA

1930 to 1990

1080

28

50

18.0

36

34 [2]