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BLA6H0912L-1000 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BLA6H0912L-1000 Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 13 page 1. Product profile 1.1 General description 1000W LDMOS pulsed power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS, JTIDS, DME and TACAN. 1.2 Features and benefits Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (960 MHz to 1215 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications 1000 W LDMOS pulsed power transistor intended for Mode-S, TCAS, JTIDS, DME and TACAN applications in the 960 MHz to 1215 MHz frequency range BLA6H0912L-1000; BLA6H0912LS-1000 LDMOS avionics power transistor Rev. 4 — 2 July 2015 Product data sheet Table 1. Application information Typical RF performance at Tcase =25 C; tp = 50 s; = 2 %; IDq = 200 mA; in a class-AB application circuit. Test signal f VDS PL Gp D tr tf (MHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1030 50 1000 16 52 11 5 |
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