BLF6G15L-500H_6G15LS-500H

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Product data sheet

Rev. 3 — 12 July 2013

3 of 13

NXP Semiconductors

BLF6G15L-500H; BLF6G15LS-500H

Power LDMOS transistor

5.

Thermal characteristics

6.

Characteristics

[1]

Measured [dBc] with delta marker at 4.3 MHz from center frequency.

[2]

PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on

CCDF.

6.1 Ruggedness in class-AB operation

The BLF6G15L-500H and BLF6G15LS-500H are capable of withstanding a load

mismatch corresponding to VSWR = 10 : 1 through all phases under the following

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

0.18

K/W

Table 6.

DC characteristics

Symbol Parameter

Conditions

Min

Typ

Max Unit

100

-

-

V

gate-source threshold voltage

1.4

1.8

2.4

V

drain leakage current

--2.8

A

drain cut-off current

38

42

-

A

gate leakage current

--280

nA

forward transconductance

1.33

2.3

-

S

drain-source on-state resistance

-100

193

m



Table 7.

RF characteristics

RF characteristics in NXP class-AB production circuit, in frequency range 1452 MHz to 1492 MHz;

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

DVB-T (8k OFDM), class-AB

drain-source voltage

-

50

-

V

quiescent drain current

-

1.3

-

A

average output power

-

65

-

W

power gain

14.5

16

-

dB



D

drain efficiency

16

19

-

%

intermodulation distortion shoulder

[1] -

32

30

dBc

PAR

peak-to-average ratio

[2] 8.5

9

-

dB