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BLC8G27LS-100AV Datasheet(PDF) 8 Page - NXP Semiconductors |
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BLC8G27LS-100AV Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page BLC8G27LS-100AV All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 2 — 29 September 2014 8 of 14 NXP Semiconductors BLC8G27LS-100AV Power LDMOS transistor 7.6.3 1-Carrier W-CDMA VDS =28V; IDq = 250 mA (main device); VGS(amp)peak =0.8 V. (1) f = 2496 MHz (2) f = 2690 MHz VDS =28V; IDq = 250 mA (main device); VGS(amp)peak =0.8 V. (1) f = 2496 MHz (2) f = 2690 MHz Fig 6. Power gain and drain efficiency as function of output power; typical values Fig 7. Peak-to-average power ratio as a function of output power; typical values VDS =28V; IDq = 250 mA (main device); VGS(amp)peak =0.8 V. (1) f = 2496 MHz (2) f = 2690 MHz VDS =28V; IDq = 250 mA (main device); VGS(amp)peak =0.8 V. (1) f = 2496 MHz (2) f = 2690 MHz Fig 8. Input return loss as a function of output power; typical values Fig 9. Adjacent channel power ratio (5 MHz) as a function of output power; typical values |
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