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BC857N3 Datasheet(PDF) 3 Page - Cystech Electonics Corp.

Part # BC857N3
Description  General Purpose NPN Epitaxial Planar Transistor
Download  8 Pages
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

BC857N3 Datasheet(HTML) 3 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C306N3
Issued Date : 2015.04.09
Revised Date :
Page No. : 3/8
BC857N3
CYStek Product Specification
Typical Characteristics
Emitter Grounded Output Characteristics
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
01
2
34
5
6
-VCE, Collector-to-Emitter Voltage(V)
200uA
300uA
400uA
500uA
1mA
-IB=100uA
Emitter Grounded Output Characteristics
0
0.05
0.1
0.15
0.2
0.25
01
23
45
6
-VCE, Collector-to-Emitter Voltage(V)
1mA
1.5mA
2.5mA
5mA
-IB=500uA
Emitter Grounded Output Characteristics
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
01
23
45
6
-VCE, Collector-to-Emitter Voltage(V)
4mA
6mA
10mA
20mA
-IB=2mA
Emitter Grounded Output Characteristics
0
0.1
0.2
0.3
0.4
0.5
0.6
01
2
34
56
-VCE, Collector-to-Emitter Voltage(V)
10mA
20mA
25mA
50mA
-IB=5mA
Current Gain vs Collector Current
10
100
1000
10000
0.01
0.1
1
10
100
1000
-IC, Collector Current(mA)
Tj=125°C
75°C
25°C
0°C
-40°C
-VCE=1V
Current Gain vs Collector Current
10
100
1000
10000
0.01
0.1
1
10
100
1000
-IC, Collector Current(mA)
Tj=125°C
75°C
25°C
0°C
-40°C
-VCE=2V


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