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MTP3413SN3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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MTP3413SN3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 9 page CYStech Electronics Corp. Spec. No. : C394N3 Issued Date : 2012.01.19 Revised Date : 2015.03.30 Page No. : 1/9 MTP3413SN3 CYStek Product Specification P-Channel Logic Level Enhancement Mode MOSFET MTP3413SN3 BVDSS -20V ID@VGS=-4.5V, TA=25°C -4.9A VGS=-4.5V, ID=-4.3A 39mΩ VGS=-2.5V, ID=-2.5A 51mΩ RDSON(TYP) VGS=-1.8V, ID=-2A 75mΩ Features • 1.8V gate rated • Advanced trench process technology • High density cell design for ultra low on resistance • Pb-free lead plating and halogen-free package Equivalent Circuit Outline Ordering Information Device Package Shipping MTP3413SN3-0-T1-G SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel MTP3413SN3 SOT-23 D G:Gate S G S:Source D:Drain Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name |
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