CYStech Electronics Corp.

Spec. No. : C322N3

Issued Date : 2015.01.06

Revised Date :

Page No. : 2/9

MTP2305AN3

CYStek Product Specification

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8

V

-3.4

-2.7

Pulsed Drain Current

-10

A

Maximum Power Dissipation

Ta=25℃

Ta=70℃

W

Operating Junction and Storage Temperature Range

Tj ; Tstg

-55~+150

°C

Thermal Performance

Parameter

Symbol

Limit

Unit

Thermal Resistance, Junction-to-Ambient(PCB mounted)

Rth,ja

°C/W

Lead Temperature, for 5 second soldering(1/8” from case)

260

°C

Note : Surface mounted on 1 in ²FR-4 board with 2 oz. copper, t≦5sec; 270°C/W when mounted on minimum copper pad.

Electrical Characteristics (Ta=25

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

-20

-

-

V

-0.45

-

-

V

-

-

±100

nA

-

-

-1

µA

-

79

108

-

116

150

m

Ω

-

6.3

-

S

Dynamic

Ciss

-

446

-

Coss

-

57

-

Crss

-

52

-

pF

-

9.2

20

-

7.3

60

-

38

50

-

12

20

ns

Qg

-

3

10

Qgs

-

0.8

-

Qgd

-

1.1

-

nC