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MTE300P10J3 Datasheet(PDF) 5 Page - Cystech Electonics Corp.

Part # MTE300P10J3
Description  P-Channel Enhancement Mode Power MOSFET
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTE300P10J3 Datasheet(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C136J3
Issued Date : 2015.09.04
Revised Date :
MTE300P10J3
CYStek Product Specification
Typical Characteristics (Cont.)
Capacitance vs Drain-to-Source Voltage
10
100
1000
0
102030
Threshold Voltage vs Junction Tempearture
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-250
μA
ID=-1mA
f=1MHz
Ciss
-VDS, Drain-Source Voltage(V)
C oss
Crss
Maximum Safe Operating Area
0.1
1
10
100
0.1
1
10
100
1000
-VDS, Drain-Source Voltage(V)
RDS(ON)
Limited
DC
10ms
100ms
1ms
100
μs
1s
TC=25°C, Tj=150°C,
VGS=-10V, RθJC=4°C/W,
single pulse
Gate Charge Characteristics
0
2
4
6
8
10
024
68
10
Qg, Total Gate Charge(nC)
VDS=-80V
ID=-11A
Maximum Drain Current vs Case Temperature
0
1
2
3
4
5
6
7
8
25
50
75
100
125
150
175
TC, Case Temperature(°C)
VGS=-10V, Tj(max)=150°C,
RθJC=4°C/W, single pulse
Typical Transfer Characteristics
0
2
4
6
8
10
01
23
45
67
89
10
-VGS, Gate-Source Voltage(V)
VDS=-10V


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