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MTD30N10J3 Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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MTD30N10J3 Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C887J3 Issued Date : 2015.04.23 Revised Date : Page No. : 2/ 9 MTD30N10J3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 V Continuous Drain Current @ TC=25 °C, VGS=10V 33 Continuous Drain Current @ TC=100 °C, VGS=10V ID 23 Pulsed Drain Current (Note 1) IDM 90 Avalanche Current IAS 32 A Avalanche Energy @ L=0.3mH, ID=32A, RG=25Ω EAS 154 Repetitive Avalanche Energy@ L=0.05mH (Note 2) EAR 12 mJ Total Power Dissipation @ TC=25℃ 115 Total Power Dissipation @ TC=100℃ PD 57.5 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 °C Note : 1. Pulse width limited by maximum junction temperature. 2. Duty cycle ≤ 1%. Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 1.3 Thermal Resistance, Junction-to-ambient, max Rth,j-a 50 (Note) Thermal Resistance, Junction-to-ambient, max Rth,j-a 110 °C/W Note : When mounted on the minimum pad size recommended (PCB mount). Characteristics (TC=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - VGS=0V, ID=250μA VGS(th) 1.5 - 2.5 V VDS = VGS, ID=250μA IGSS - - ± 100 nA VGS=±20, VDS=0V - - 1 VDS =80V, VGS =0V IDSS - - 25 μA VDS =80V, VGS =0V, Tj=125 °C - 31 40 VGS =10V, ID=10A *RDS(ON) - 39 55 mΩ VGS =4.5V, ID=10A *GFS - 24 - S VDS =5V, ID=10A Dynamic *Qg - 22.4 - *Qgs - 3 - *Qgd - 9.1 - nC VDS=80V, ID=25A, VGS=10V *td(ON) - 10 - *tr - 18.2 - *td(OFF) - 43.6 - *tf - 21.2 - ns VDS=50V, ID=1A, VGS=10V, RGS=6Ω |
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