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MTBA5C10H8 Datasheet(PDF) 5 Page - Cystech Electonics Corp.

Part # MTBA5C10H8
Description  N- AND P-Channel Enhancement Mode MOSFET
Download  13 Pages
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTBA5C10H8 Datasheet(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 5/13
MTBA5C10H8
CYStek Product Specification
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
0
2
4
6
8
10
12
01
2
34
5
Brekdown Voltage vs Ambient Temperature
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=250μA,
VGS=0V
VDS, Drain-Source Voltage(V)
10V, 9V, 8V, 7V, 6V, 5V, 4V
VGS=3V
Static Drain-Source On-State resistance vs Drain Current
100
1000
10000
0.01
0.1
1
10
100
ID, Drain Current(A)
VGS=3V
VGS=2.5V
VGS=4.5V
VGS=10V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
02
46
8
1
IDR, Reverse Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
120
140
160
180
200
220
240
260
280
300
02
4
6
8
10
0
Tj=25°C
Tj=150°C
VGS=0V
Drain-Source On-State Resistance vs Junction Tempearture
0.4
0.8
1.2
1.6
2
2.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
VGS=10V, ID=2.5A
RDSON@Tj=25°C : 120mΩ typ
VGS, Gate-Source Voltage(V)
ID=2.5A


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