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MTBA5C10H8 Datasheet(PDF) 5 Page - Cystech Electonics Corp. |
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MTBA5C10H8 Datasheet(HTML) 5 Page - Cystech Electonics Corp. |
5 / 13 page CYStech Electronics Corp. Spec. No. : C744H8 Issued Date : 2015.03.27 Revised Date : 2015.03.30 Page No. : 5/13 MTBA5C10H8 CYStek Product Specification Typical Characteristics : Q1( N-channel ) Typical Output Characteristics 0 2 4 6 8 10 12 01 2 34 5 Brekdown Voltage vs Ambient Temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250μA, VGS=0V VDS, Drain-Source Voltage(V) 10V, 9V, 8V, 7V, 6V, 5V, 4V VGS=3V Static Drain-Source On-State resistance vs Drain Current 100 1000 10000 0.01 0.1 1 10 100 ID, Drain Current(A) VGS=3V VGS=2.5V VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 02 46 8 1 IDR, Reverse Drain Current(A) Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 220 240 260 280 300 02 4 6 8 10 0 Tj=25°C Tj=150°C VGS=0V Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS=10V, ID=2.5A RDSON@Tj=25°C : 120mΩ typ VGS, Gate-Source Voltage(V) ID=2.5A |
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