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BQ24133 Datasheet(PDF) 4 Page - Texas Instruments |
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BQ24133 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 40 page ACSET DPM AC V I = 20 R ´ PVCC PVCC AVCC ACN ACP CMSRC ACDRV STAT TS TTC PGND PGND BTST REGN BATDRV OVPSET ACSET SRP SRN CELL 1 24 AGND 2 3 4 5 6 7 8 9 10 11 23 22 21 20 19 18 17 16 15 14 12 13 bq24133 SLUSAF7C – DECEMBER 2010 – REVISED APRIL 2015 www.ti.com 7 Pin Configuration and Functions RGY Package 24-Pin VQFN Top View Pin Functions PIN TYPE DESCRIPTION NAME NO. AC adapter to system switch driver output. Connect to 4-k Ω resistor then to the gate of the ACFET N- channel power MOSFET and the reverse conduction blocking N-channel power MOSFET. Connect both ACDRV 8 O FETs as common-source. The internal gate drive is asymmetrical, allowing a quick turnoff and slower turnon in addition to the internal break-before-make logic with respect to the BATDRV. Adapter current sense resistor negative input. A 0.1-µF ceramic capacitor is placed from ACN to ACP to ACN 5 I provide differential-mode filtering. An optional 0.1-µF ceramic capacitor is placed from ACN pin to AGND for common-mode filtering. Adapter current sense resistor positive input. A 0.1-µF ceramic capacitor is placed from ACN to ACP to ACP 6 P/I provide differential-mode filtering. A 0.1-µF ceramic capacitor is placed from ACP pin to AGND for common-mode filtering. Input current set point. Use a voltage divider from VREF to ACSET to AGND to set this value: ACSET 17 I Exposed pad beneath the IC. Always solder Thermal Pad to the board, and have vias on the Thermal Thermal AGND P Pad plane star-connecting to AGND and ground plane for high-current power converter. It dissipates the Pad heat from the IC. IC power positive supply. Place a 1-µF ceramic capacitor from AVCC to AGND and place it as close as AVCC 4 P possible to IC. Place a 10- Ω resistor from input side to AVCC pin to filter the noise. For 5-V input, a 5-Ω resistor is recommended. Battery discharge MOSFET gate driver output. Connect to 1-k Ω resistor to the gate of the BATFET P- channel power MOSFET. Connect the source of the BATFET to the system load voltage node. Connect BATDRV 19 O the drain of the BATFET to the battery pack positive node. The internal gate drive is asymmetrical to allow a quick turnoff and slower turnon, in addition to the internal break-before-make logic with respect to ACDRV. BTST 21 P PWM high-side driver positive supply. Connect the 0.047-µF bootstrap capacitor from SW to BTST. Cell selection pin. Set CELL pin LOW for 1-cell, Float for 2-cell (0.8 V - 1.8 V), and HIGH for 3-cell with a CELL 14 I fixed 4.2 V per cell. Connect to common source of N-channel ACFET and reverse blocking MOSFET (RBFET). Place 4-k Ω CMSRC 7 O resistor from CMSRC pin to the common source of ACFET and RBFET to control the turnon speed. The resistance between ACDRV and CMSRC should be 500 k Ω or bigger. 4 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: bq24133 |
Similar Part No. - BQ24133_15 |
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Similar Description - BQ24133_15 |
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