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BQ24133 Datasheet(PDF) 4 Page - Texas Instruments

Part # BQ24133
Description  bq24133 1.6-MHz Synchronous Switched-Mode Li-Ion and Li-Polymer Stand-Alone BatteryCharger With Integrated MOSFETs and Power Path Selector
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

BQ24133 Datasheet(HTML) 4 Page - Texas Instruments

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ACSET
DPM
AC
V
I
=
20
R
´
PVCC
PVCC
AVCC
ACN
ACP
CMSRC
ACDRV
STAT
TS
TTC
PGND
PGND
BTST
REGN
BATDRV
OVPSET
ACSET
SRP
SRN
CELL
1
24
AGND
2
3
4
5
6
7
8
9
10
11
23
22
21
20
19
18
17
16
15
14
12
13
bq24133
SLUSAF7C – DECEMBER 2010 – REVISED APRIL 2015
www.ti.com
7 Pin Configuration and Functions
RGY Package
24-Pin VQFN
Top View
Pin Functions
PIN
TYPE
DESCRIPTION
NAME
NO.
AC adapter to system switch driver output. Connect to 4-k
Ω resistor then to the gate of the ACFET N-
channel power MOSFET and the reverse conduction blocking N-channel power MOSFET. Connect both
ACDRV
8
O
FETs as common-source. The internal gate drive is asymmetrical, allowing a quick turnoff and slower
turnon in addition to the internal break-before-make logic with respect to the BATDRV.
Adapter current sense resistor negative input. A 0.1-µF ceramic capacitor is placed from ACN to ACP to
ACN
5
I
provide differential-mode filtering. An optional 0.1-µF ceramic capacitor is placed from ACN pin to AGND
for common-mode filtering.
Adapter current sense resistor positive input. A 0.1-µF ceramic capacitor is placed from ACN to ACP to
ACP
6
P/I
provide differential-mode filtering. A 0.1-µF ceramic capacitor is placed from ACP pin to AGND for
common-mode filtering.
Input current set point. Use a voltage divider from VREF to ACSET to AGND to set this value:
ACSET
17
I
Exposed pad beneath the IC. Always solder Thermal Pad to the board, and have vias on the Thermal
Thermal
AGND
P
Pad plane star-connecting to AGND and ground plane for high-current power converter. It dissipates the
Pad
heat from the IC.
IC power positive supply. Place a 1-µF ceramic capacitor from AVCC to AGND and place it as close as
AVCC
4
P
possible to IC. Place a 10-
Ω resistor from input side to AVCC pin to filter the noise. For 5-V input, a 5-Ω
resistor is recommended.
Battery discharge MOSFET gate driver output. Connect to 1-k
Ω resistor to the gate of the BATFET P-
channel power MOSFET. Connect the source of the BATFET to the system load voltage node. Connect
BATDRV
19
O
the drain of the BATFET to the battery pack positive node. The internal gate drive is asymmetrical to
allow a quick turnoff and slower turnon, in addition to the internal break-before-make logic with respect to
ACDRV.
BTST
21
P
PWM high-side driver positive supply. Connect the 0.047-µF bootstrap capacitor from SW to BTST.
Cell selection pin. Set CELL pin LOW for 1-cell, Float for 2-cell (0.8 V - 1.8 V), and HIGH for 3-cell with a
CELL
14
I
fixed 4.2 V per cell.
Connect to common source of N-channel ACFET and reverse blocking MOSFET (RBFET). Place 4-k
Ω
CMSRC
7
O
resistor from CMSRC pin to the common source of ACFET and RBFET to control the turnon speed. The
resistance between ACDRV and CMSRC should be 500 k
Ω or bigger.
4
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