Central Semiconductor’s CBRHDSH1 series of full wave bridge

rectifiers offer a broad selection of voltages, including the new

200V CBRHDSH1-200. These devices are designed for high

voltage rectification applications where energy efficiency is a key

design requirement.

HD DIP

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1.0A, 40V thru 200V Schottky Bridge Rectifier

in the HD DIP package

CBRHDSH1-100

CBRHDSH1-60

CBRHDSH1-200

CBRHDSH1-40L

Typical Electrical Characteristics

To order samples of this device visit:

www.centralsemi.com/info/CBRHDSH1

Maximum Ratings (TA = 25˚C)

Electrical Characteristics (TA = 25˚C unless otherwise noted)

VRRM

(V)

MAX

IO

(A)

MAX

TJ

(˚C)

MAX

Tstg

(˚C)

MAX

ΘJA

(˚C/W)

MAX

VF

@ IF

(V)

(V)

(A)

TYP

MAX

IR

@ VR

*TA = 100˚C

(μA)

(μA)

(V)

TYP

MAX

CBRHDSH1-40L

40

1.2

-50 to +125

-50 to +150

85

0.36

0.39

0.38

0.44

0.5

1.0

20

*5.0mA

50

*20mA

40

40

CBRHDSH1-60

60

1.0

-50 to +125

-50 to +150

85

0.43

0.5

0.5

0.6

0.5

1.0

7.0

*2.0mA

20

*10mA

60

60

CBRHDSH1-100

100

1.0

-50 to +125

-50 to +150

85

0.65

0.7

0.7

0.75

0.5

1.0

0.04

–

10

*20mA

100

100

CBRHDSH1-200

200

1.0

-50 to +125

-50 to +150

85

0.76

0.9

1.0

0.2

–

50

*20mA

200

200

145 Adams Avenue

• Energy efficiency

• Low total conduction losses

• Industry standard package/footprint

Benefits:

Samples

Features:

• Low forward voltage

• Low leakage current

• High current rating

• High voltage rating

Applications:

• Input rectification for LED lighting

• Power over ethernet (PoE) peripherals

• General purpose full wave rectification

Product Brief

Product Brief

Extended

Range:

200 Volts