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MTB5D0P03H8 Datasheet(PDF) 6 Page - Cystech Electonics Corp. |
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MTB5D0P03H8 Datasheet(HTML) 6 Page - Cystech Electonics Corp. |
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6 / 9 page  CYStech Electronics Corp. Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 6/ 9 MTB5D0P03H8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0 10 20 30 40 50 60 70 80 012 345 -VGS, Gate-Source Voltage(V) VDS=-10V Single Pulse Maximum Power Dissipation 0 50 100 150 200 250 300 350 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) TJ(MAX)=150°C TA=25°C θJA=65°C/W Power Derating Curve 0 20 40 60 80 100 0 25 50 75 100 125 150 175 TC, Case Temperature(℃) Transient Thermal Response Curves 0.001 0.01 0.1 1 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.5°C/W |
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