Low-Voltage, Silicon RF Power

Amplifier/Predriver

2

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ABSOLUTE MAXIMUM RATINGS

DC ELECTRICAL CHARACTERISTICS

AC ELECTRICAL CHARACTERISTICS

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

VCC1, VCC2 ..........................................................................+6V

RFIN.............................................................................-0.3V, +2V

PwrQSOP (derate 20mW/°C above +70°C) ......................1.6W

Narrow SO (derate 20mW/°C above +70°C) ....................1.6W

Operating Temperature Range ...........................-20°C to +85°C

Storage Temperature Range .............................-65°C to +160°C

Lead Temperature (soldering, 10sec) .............................+300°C

SHDN = low

BIAS pin open

CONDITIONS

µA

110

Shutdown Supply Current

mA

52

70

V

3

5.5

Supply Voltage Range

Supply Current

V

2.2

BIAS Pin Voltage

V

2.2

SHDN High Input

V

0.4

SHDN Low Input

µA

18

SHDN Bias Current

UNITS

MIN

TYP

MAX

SYMBOL

PARAMETER

(Note 2)

f1 = 915MHz, f2 = 916MHz,

CONDITIONS

dBm

19

20.4

20

21.4

MHz

800

1000

Frequency Range

32

34

dB

Power Gain

dBc

-30

OIM3

Output IM3

UNITS

MIN

TYP

MAX

SYMBOL

PARAMETER

RFIN connected to 50

Ω source

%

24

η

Efficiency

dBc

-40

dBc

-26

2nd Harmonic

3rd Harmonic

mA

160

Supply Current

2:1

Maximum Input VSWR

8:1

Maximum Output Load

Mismatch

dB

7

NF

Noise Figure

6:1

Maximum Output Load

Mismatch for Stability

31

33

MAX2430ISE

MAX2430IEE