2N7002

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 7 — 8 September 2011

3 of 13

NXP Semiconductors

2N7002

60 V, 300 mA N-channel Trench MOSFET

Fig 1.

Normalized continuous drain current as a

function of solder point temperature

Fig 2.

Normalized total power dissipation as a

function of solder point temperature

Fig 3.

Safe operating area; continous and peak drain currents as a function of drain-source voltage

0

200

150

50

100

03aa25

40

80

120

(%)

0

0

200

150

50

100

03aa17

40

80

120

(%)

0

003aab350

10

-2

10

-1

1

10

1

10

10

2

(A)

DC

1 ms

100 µs

10 ms

100 ms

10 µs