2N7002BKV_15 datasheet(6/16 Pages) PHILIPS

Part #	2N7002BKV

Description	60 V, 340 mA dual N-channel Trench MOSFET

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2N7002BKV

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Product data sheet

Rev. 2 — 22 September 2010

6 of 16

NXP Semiconductors

2N7002BKV

60 V, 340 mA dual N-channel Trench MOSFET

7.

Characteristics

[1]

Pulse test: tp ≤ 300 μs; δ≤ 0.01.

Table 7.

Characteristics

Tj =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source breakdown

voltage

ID =10 μA; VGS = 0 V

60

--V

VGS(th)

gate-source threshold

voltage

ID =250 μA; VDS =VGS

1.1

1.6

2.1

V

IDSS

drain leakage current

VDS =60V; VGS =0V

Tj =25 °C

--1

μA

Tj = 150 °C

--10

μA

IGSS

gate leakage current

VGS = ±20 V; VDS = 0 V

--10

μA

RDSon

drain-source on-state

resistance

[1]

VGS =5V; ID =50mA

-

1.3

2

Ω

VGS =10V; ID =500 mA

-

1

1.6

Ω

gfs

forward

transconductance

VDS =10V; ID = 200 mA [1] -

550

-

mS

Dynamic characteristics

QG(tot)

total gate charge

ID =300 mA;

VDS =30V;

VGS =4.5 V

-0.5

0.6

nC

QGS

gate-source charge

-

0.2

-

nC

QGD

gate-drain charge

-

0.1

-

nC

Ciss

input capacitance

VGS =0V; VDS =10V;

f=1MHz

-

3350pF

Coss

output capacitance

-

7

-

pF

Crss

reverse transfer

capacitance

-4

-pF

td(on)

turn-on delay time

VDD =50V;

RL =250 Ω;

VGS =10V;

RG =6 Ω

-

5

10

ns

tr

rise time

-6

-ns

td(off)

turn-off delay time

-

12

24

ns

tf

fall time

-

7

-

ns

Source-drain diode

VSD

source-drain voltage

IS =115 mA; VGS = 0 V

0.47

0.75

1.1

V

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