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BYV29B_600 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BYV29B_600 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 13 page BYV29B_600 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 14 September 2011 5 of 13 NXP Semiconductors BYV29B-600 Rectifier diode ultrafast 6. Characteristics Table 5. Characteristics Tj =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics VF forward voltage IF =8A Tj = 150 C; Figure 4 - 0.9 1.03 V Tj =25 C; Figure 4 - 1.05 1.25 V IF = 20 A - 1.3 1.45 V IR reverse current VR =VRRM Tj = 100 C- 0.1 0.35 mA Tj =25 C- 2 50 A Dynamic characteristics Cd diode capacitance f = 1 MHz; VR = 100 V; Figure 8 -7 - pF Qrr reverse recovery charge IF =2A; VR 30 V; dIF/dt = 20 A/s; Figure 7 -40 70 nC trr reverse recovery time IF =1A; VR 30 V; dIF/dt = 100 A/s; Figure 5 -50 60 ns Irrm peak reverse recovery current IF =10A; VR 30 V; dIF/dt = 50 A/s Tj = 100 C; Figure 6 -3 5.5 A Vfr forward recovery voltage IF =10A; dIF/dt = 10 A/s - 3.2 - V |
Similar Part No. - BYV29B_600_15 |
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Similar Description - BYV29B_600_15 |
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