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BYC10-600CT Datasheet(PDF) 4 Page - NXP Semiconductors |
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BYC10-600CT Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1;3 Semiconductors Product specification Rectifier diode BYC10-600CT ultrafast, low switching loss Fig.3. Maximum forward dissipation per diode as a function of average forward current; rectangular current waveform where I F(AV) =IF(RMS) x √D. Fig.4. Typical reverse recovery switching losses per diode, as a function of rate of change of current dI F/dt. Fig.5. Typical switching losses in transistor due to reverse recovery of diode, as a function of of change of current dI F/dt. Fig.6. Origin of switching losses in transistor due to diode reverse recovery. Fig.7. Typical reverse recovery time t rr, per diode as a function of rate of change of current dI F/dt. Fig.8. Typical peak reverse recovery current per diode, I rrm as a function of rate of change of current dI F/dt. 01 2345 678 0 5 10 15 D = 1.0 0.5 0.2 0.1 BYC5-600 Rs = 0.09 Ohms Vo = 1.3 V 150 137.5 125 112.5 Average forward current, IF(AV) (A) Forward dissipation, PF (W) Tmb(max) C D = tp tp T T t I time ID Irrm VD dIF/dt ID = IL losses due to diode reverse recovery 100 1000 0 0.05 0.1 0.15 0.2 BYC5-600 f = 20 kHz Rate of change of current, dIF/dt (A/us) Diode reverse recovery switching losses, Pdsw (W) IF = 5 A 10 A 7.5 A Tj = 125 C VR = 400 V 100 1000 10 100 BYC5-600 Rate of change of current, dIF/dt (A/us) Reverse recovery time, trr (ns) 10 A 7.5 A IF = 5 A Tj = 125 C VR = 400 V 100 1000 0 1 2 3 4 5 BYC5-600 Rate of change of current, dIF/dt (A/us) Transistor losses due to diode reverse recovery, Ptsw (W) f = 20 kHz Tj = 125 C VR = 400 V IF = 5 A 7.5 A 10 A 100 1000 1 10 100 BYC5-600 Rate of change of current, dIF/dt (A/us) Peak reverse recovery current, Irrm (A) Tj = 125 C VR = 400 V IF = 5 A 10 A March 2001 3 Rev 1.200 |
Similar Part No. - BYC10-600CT_15 |
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Similar Description - BYC10-600CT_15 |
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