Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the designer with

anextremelyefficientandreliabledeviceforuseinawidevariety

ofapplications.

Acustomizedleadframehasbeenincorporatedintothestandard

SOT-23 package to produce a HEXFET Power MOSFET with

the industry's smallest footprint. This package, dubbed the

Micro3, is ideal for applications where printed circuit board

space is at a premium. The low profile (<1.1mm) of the Micro3

allowsittofiteasilyintoextremelythinapplicationenvironments

such as portable electronics and PCMCIA cards.

Description

l

Generation V Technology

l

Ultra Low On-Resistance

l

N-ChannelMOSFET

l

SOT-23Footprint

l

Low Profile (<1.1mm)

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Available in Tape and Reel

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Fast Switching

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Lead-Free

l

RoHS Compliant, Halogen-Free

Absolute Maximum Ratings

Parameter

Units

Pulsed Drain Current

c

Power Dissipation

mW

Linear Derating Factor

mW/°C

Gate-to-Source Voltage

V

Single Pulse Avalanche Energy

g

mJ

dv/dt

Peak diode Recovery dv/dt

d

V/ns

Junction and Storage Temperature Range

°C

Thermal Resistance

Parameter

Typ.

Max.

Units

Maximum Junction-to-Ambient

f

–––

230

°C/W

3.9

A

5.0

540

4.3

±20

Max.

1.2

0.93

7.3

-55 to + 150

D

S

G

3

1

2

Micro3

™

IRLML2803PbF

Form

Quantity

IRLML2803TRPbF

Micro3™ (SOT-23)

Tape and Reel

3000

IRLML2803TRPbF

Package Type

Standard Pack

Orderable Part Number

Base Part Number

1

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April 24, 2014