BAV23_SER_7

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Product data sheet

Rev. 07 — 19 March 2010

3 of 13

NXP Semiconductors

BAV23 series

Dual high-voltage switching diodes

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

Table 4.

Ordering information

Type number

Package

Name

Description

Version

BAV23A

-

plastic surface-mounted package; 3 leads

SOT23

BAV23C

BAV23S

BAV23

-

plastic surface-mounted package; 4 leads

SOT143B

Table 5.

Marking codes

Type number

Marking code[1]

BAV23A

*V0

BAV23C

*V9

BAV23S

*V5

BAV23

*L3

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

repetitive peak reverse

voltage

-250

V

reverse voltage

-

200

V

forward current

[1] -225

mA

[2] -125

mA

repetitive peak forward

current

-625

mA

non-repetitive peak forward

current

square wave

[3]

9

A

3

A

-

1.7

A