BAT760_3

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 03 — 17 October 2008

3 of 9

NXP Semiconductors

BAT760

Medium power Schottky barrier single diode

6.

Thermal characteristics

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

cathode 10

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 40

7.

Characteristics

[1]

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

in free air

[1] -

-

220

K/W

[2] -

-

180

K/W

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

[1]

-

240

270

mV

-

300

350

mV

-

480

550

mV

reverse current

[1]

-

5

10

µA

-

7

20

µA

-

10

50

µA

diode capacitance

-

19

25

pF