3

in Table1.

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

Idd

Bias Current

mA

59

75

101

(Power Down mode)

mA

–

0.15

–

Gain

Gain

dB

16

17.3

19

Noise Figure

dB

–

0.52

0.75

Input Third Order Intercept Point

dBm

21

22.5

–

OP1dB

Output Power at 1dB Gain Compression

dBm

–

21.9

–

IRL

Input Return Loss, 50

 source

dB

–

13

–

ORL

Output Return Loss, 50

 load

dB

–

15.8

–

Notes:

1. Measurements at 1.7 GHz obtained using demo board described in Figure 5.

2. For NF data, board losses of the input have not been de-embedded.

4. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application

note for more details.

Figure 1. Idd, LSL = 59 mA , nominal = 75 mA, USL = 101 mA

Figure 2. NF, nominal = 0.52 dB, USL = 0.75 dB

Figure 3. IIP3, LSL = 21 dBm, nominal = 22.5 dBm

Figure 4. Gain, LSL = 16 dB, nominal = 17.3 dB, USL = 19 dB

Notes:

1. Distribution data sample size is 500 samples taken from 3 different wafer lots. Future wafers allocated to this product may have nominal values

anywhere between the upper and lower limits.

2. Circuit trace losses have not been de-embedded from measurements above.

LSL

USL

USL

0.4

0.5

0.6

0.7

0.8

50

60

80

90

100

70

LSL

21

22

24

23

LSL

USL

16

17

18

19