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BAT74S Datasheet(PDF) 5 Page - NXP Semiconductors |
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BAT74S Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 10 page NXP Semiconductors BAT74S Dual Schottky barrier diode BAT74S All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 22 November 2012 5 / 10 006aac891 VR (V) 0 30 20 10 4 6 2 8 10 Cd (pF) 0 Tamb = 25 °C; f = 1 MHz Fig. 4. Diode capacitance as a function of reverse voltage; typical values 8. Test information trr (1) + IF t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 (1) IR = 1 mA Fig. 5. Reverse recovery time test circuit and waveforms 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. |
Similar Part No. - BAT74S_15 |
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Similar Description - BAT74S_15 |
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