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BAP70AM Datasheet(PDF) 2 Page - NXP Semiconductors |
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BAP70AM Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page BAP70AM All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 4 — 7 March 2014 2 of 8 NXP Semiconductors BAP70AM Silicon PIN diode array 4. Marking 5. Limiting values 6. Thermal characteristics Table 3. Marking Type number Marking code Description BAP70AM N9* * = - : made in Hong Kong * = p : made in Hong Kong * = t : made in Malaysia Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 50 V IF forward current - 100 mA Ptot total power dissipation Tsp =90 C- 300 mW Tstg storage temperature 65 +150 C Tj junction temperature 65 +150 C Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-sp) thermal resistance from junction to solder point 260 K/W |
Similar Part No. - BAP70AM_15 |
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