M53D2561616A-2F datasheet(5/47 Pages) ESMT

Part #	M53D2561616A-2F

Description	Bi-directional data strobe (DQS)

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Manufacturer	ESMT [Elite Semiconductor Memory Technology Inc.]

Direct Link	http://www.esmt.com.tw/index.asp

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5 / 47 page

ESMT

M53D2561616A (2F)

Elite Semiconductor Memory Technology Inc.

Publication Date : Feb. 2014

Revision : 1.1

5/47

TCSR range

45

75

C

°

Full array

650

700

μ

A

1/2 array

600

650

μ

A

1/4 array

550

600

μ

A

1/8 array

500

550

μ

A

Self Refresh Current

IDD6

CKE = LOW, CLK = LOW,

CLK = HIGH; EMRS set to all

0’s; address & control & data bus

inputs are STABLE

1/16 array

450

500

μ

A

Deep Power Down

Current

IDD8

address & control & data inputs are STABLE

10

μ

A

Note: 1. Input slew rate is 1V/ns.

2. IDD specifications are tested after the device is properly initialized.

3. Definitions for IDD: LOW is defined as V IN ≤ 0.1 * V DDQ;

HIGH is defined as V IN ≥ 0.9 * V DDQ;

STABLE is defined as inputs stable at a HIGH or LOW level;

SWITCHING is defined as: - address and command: inputs changing between HIGH and LOW once

per two clock cycles;

- data bus inputs: DQ changing between HIGH and LOW once per clock

cycle; DM and DQS are STABLE.

AC Operation Conditions & Timing Specification

AC Operation Conditions

Parameter

Symbol

Min

Max

Unit

Note

Input High (Logic 1) Voltage, DQ, DQS and DM signals

VIHD(AC)

0.8 x VDDQ

VDDQ+0.3

V

Input Low (Logic 0) Voltage, DQ, DQS and DM signals

VILD(AC)

-0.3

0.2 x VDDQ

V

Input Differential Voltage, CLK and CLK inputs

VID(AC)

0.6 x VDDQ

VDDQ+0.6

V

1

Input Crossing Point Voltage, CLK and CLK inputs

VIX(AC)

0.4 x VDDQ

0.6 x VDDQ

V

2

Note: 1. VID is the magnitude of the difference between the input level on CLK and the input on CLK .

2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the

same.

Input / Output Capacitance

(VDD = 1.8V, VDDQ =1.8V, TA = 25 C

° , f = 1MHz)

Parameter

Symbol

Min

Max

Unit

Input capacitance

(A0~A12, BA0~BA1, CKE, CS , RAS , CAS , WE )

CIN1

2

5

pF

Input capacitance (CLK, CLK )

CIN2

4

7

pF

Data & DQS input/output capacitance

COUT

2

7

pF

Input capacitance (DM)

CIN3

2

6

pF

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M53D2561616A-2F Datasheet(PDF) 5 Page - Elite Semiconductor Memory Technology Inc.

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