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IRGP4078DPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRGP4078DPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRGP4078DPbF/EP 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 17, 2014 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.45 — V/°C VGE = 0V, IC = 1mA (25°C-175°C) VCE(on) Collector-to-Emitter Saturation Voltage — 1.9 2.2 V IC = 50A, VGE = 15V, TJ = 25°C — 2.5 — IC = 50A, VGE = 15V, TJ = 150°C — 2.6 — IC = 50A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 1.0mA gfe Forward Transconductance — 26 — S VCE = 50V, IC = 50A, PW = 20µs ICES Collector-to-Emitter Leakage Current — 1.0 80 µA VGE = 0V, VCE = 600V — 600 — VGE = 0V, VCE = 600V, TJ = 175°C VFM Diode Forward Voltage Drop — 1.17 1.30 V IF = 25A — 1.06 — IF = 25A, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 61 92 IC = 50A Qge Gate-to-Emitter Charge (turn-on) — 20 30 nC VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 22 33 VCC = 300V Eoff Turn-Off Switching Loss — 1.1 1.4 mJ IC = 50A, VCC = 400V, VGE = 15V RG = 10, L = 210µH, TJ = 25°C td(off) Turn-Off delay time — 116 — ns Energy losses include tail & diode tf Fall time — 33 — reverse recovery Eoff Turn-Off Switching Loss — 1.5 — mJ IC = 50A, VCC = 400V, VGE=15V RG = 10, L = 210µH, TJ = 175°C td(off) Turn-Off delay time — 113 — ns Energy losses include tail & diode tf Fall time — 54 — reverse recovery Cies Input Capacitance — 2105 — VGE = 0V Coes Output Capacitance — 131 — pF VCC = 30V Cres Reverse Transfer Capacitance — 59 — f = 1.0Mhz TJ = 175°C, IC = 200A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp ≤ 600V Rg = 10 , VGE = +20V to 0V SCSOA Short Circuit Safe Operating Area 5 — — µs VCC = 400V, Vp ≤ 600V Rg = 10 , VGE = +15V to 0V Notes: VCC = 80% (VCES), VGE = 20V, L = 23µH, RG = 10. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. fsw = 20KHz, refer to figure 19. R is measured at TJ of approximately 90°C. Sinusoidal half wave, t = 10ms. Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.54 RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 2.55 °C/W RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40 |
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