BAP51-04W_N_15 datasheet(3/7 Pages) PHILIPS

Part #	BAP51-04W_N

Description	General purpose PIN diode

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 7 page

2002 Feb 19

3

Philips Semiconductors

Preliminary specification

General purpose PIN diode

BAP51-04W

ELECTRICAL CHARACTERISTICS

Tj = 25

°C unless otherwise specified.

Note

1.

Guaranteed on AQL basis: inspection level S4, AQL 1.0.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per diode

VF

forward voltage

IF =50mA

−

0.95

1.1

V

VR

reverse voltage

IR =10

µA50

−−

V

IR

reverse current

VR =50 V

−−

100

nA

Cd

diode capacitance

VR =0; f = 1 MHz

−

0.4

−

pF

VR =1 V; f = 1 MHz

−

0.3

0.55

pF

VR =5 V; f = 1 MHz

−

0.2

0.35

pF

rD

diode forward resistance

IF = 0.5 mA; f = 100 MHz; note 1

−

5.5

9

Ω

IF = 1 mA; f = 100 MHz; note 1

−

3.6

6.5

Ω

IF = 10 mA; f = 100 MHz; note 1

−

1.5

2.5

Ω

τL

charge carrier life time

when switched from IF =10mA to

IR =6mA; RL = 100

Ω;

measured at IR =3 mA

−

550

−

ns

LS

series inductance

IF = 10 mA; f = 100 MHz

−

1.6

−

nH

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

250

K/W

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