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1PSXSB17 Datasheet(PDF) 3 Page - NXP Semiconductors |
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1PSXSB17 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 9397 750 14587 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 06 — 4 April 2005 3 of 8 Philips Semiconductors 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode 6. Thermal characteristics [1] For Schottky barrier diodes, thermal run-away has to be considered as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. [2] Refer to SOD323 (SC-76) standard mounting conditions. [3] Refer to SOD523 (SC-79) standard mounting conditions. [4] Refer to SOT666 standard mounting conditions. 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Table 6: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Table 7: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient; in free air [1] SOD323 [2] - - 450 K/W SOD523 [3] - - 450 K/W SOT666 [4] - - 700 K/W Table 8: Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage see Figure 1; [1] IF = 0.1 mA - 300 350 mV IF = 1 mA - 360 450 mV IF = 10 mA - 470 600 mV IR reverse current VR = 3 V; see Figure 2 - - 250 nA Cd diode capacitance see Figure 3; VR = 0 V; f = 1 MHz - 0.8 1 pF VR = 0.5 V; f = 1 MHz - 0.65 - pF |
Similar Part No. - 1PSXSB17_15 |
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Similar Description - 1PSXSB17_15 |
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