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IRG8P40N120KDPBF Datasheet(PDF) 3 Page - International Rectifier

Part # IRG8P40N120KDPBF
Description  Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG8P40N120KDPBF Datasheet(HTML) 3 Page - International Rectifier

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October 30, 2014
 
IRG8P40N120KDPbF/IRG8P40N120KD-EPbF
0.1
1
10
100
f , Frequency ( kHz )
0
10
20
30
40
50
60
70
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 125W
I
Square Wave:
V
CC
Diode as specified
1
10
100
1000
10000
VCE (V)
0.1
1
10
100
10µsec
100µsec
Tc = 25°C
Tj = 150°C
Single Pulse
DC
1msec
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
10
100
1000
10000
VCE (V)
1
10
100
1000
0
2
4
6
8
10
VCE (V)
0.1
1.0
10
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 2 - Forward SOA
TC = 25°C; TJ ≤ 150°C; VGE = 15V
Fig. 4 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
0
2
4
6
8
10
VCE (V)
0.1
1
10
100
Tc = -40°C
Tc = 25°C
Tc = 150°C
Fig. 5 - Typ. IGBT Saturation Voltage
VGE = 15V; tp = 20µs
Fig. 4 - Reverse Bias SOA
T
J
= 150°C; VGE = 20V


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