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IRG7PSH54K10DPBF Datasheet(PDF) 5 Page - International Rectifier

Part # IRG7PSH54K10DPBF
Description  Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG7PSH54K10DPBF Datasheet(HTML) 5 Page - International Rectifier

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© 2013 International Rectifier
April 16, 2013
 
IRG7PSH54K10DPbF
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; VCE = 600V, ICE = 50A; VGE = 15V
6
8
10
12
14
16
18
20
VGE (V)
0
2
4
6
8
10
ICE = 25A
ICE = 50A
ICE = 100A
0
255075
100
IC (A)
1
3
5
7
9
11
13
15
17
19
EOFF
EON
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 150°C; VCE = 600V, RG = 5; VGE = 15V
Fig. 12 - Typical V
CE
vs. V
GE
T
J
= 150°C
4
6
8
10
12
14
VGE, Gate-to-Emitter Voltage(V)
0
40
80
120
160
200
TJ = 25°C
TJ = 150°C
0
25
50
75
100
IC (A)
10
100
1000
tR
tdOFF
tF
tdON
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; VCE = 600V, RG = 5; VGE = 15V
0
20
40
60
80
100
120
RG ()
4
6
8
10
12
14
16
18
EOFF
EON
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; VCE = 600V, ICE = 50A; VGE = 15V
0
20
40
60
80
100
RG ()
1
10
100
1000
10000
tR
tdOFF
tF
tdON


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