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IRG7PH35UPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG7PH35UPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRG7PH35UPbF/IRG7PH35U-EP 2 www.irf.com Notes: VCC = 80% (VCES), VGE = 20V, RG = 10Ω. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V (BR)CES safely. Rθ is measured at TJ of approximately 90°C. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250μA e ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage —1.2 — V/°C VGE = 0V, IC = 1mA (25°C-150°C) VCE(on) Collector-to-Emitter Saturation Voltage — 1.9 2.2 V IC = 20A, VGE = 15V, TJ = 25°C —2.3 — IC = 20A, VGE = 15V, TJ = 150°C —2.4 — IC = 20A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, IC = 600μA ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -16 — mV/°C VCE = VGE, IC = 600μA (25°C - 150°C) gfe Forward Transconductance — 22 — S VCE = 50V, IC = 20A, PW = 30μs ICES Collector-to-Emitter Leakage Current — 2.0 100 μAVGE = 0V, VCE = 1200V —2000 — VGE = 0V, VCE = 1200V, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±30V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge (turn-on) — 85 130 IC = 20A Qge Gate-to-Emitter Charge (turn-on) — 15 20 nC VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 35 50 VCC = 600V Eon Turn-On Switching Loss — 1060 1300 IC = 20A, VCC = 600V, VGE = 15V Eoff Turn-Off Switching Loss — 620 850 μJRG = 10Ω, L = 200uH, LS = 150nH, TJ = 25°C Etotal Total Switching Loss — 1680 2150 Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 30 50 Diode clamp the same as IRG7PH35UDPbF tr Rise time — 15 30 ns td(off) Turn-Off delay time — 160 180 tf Fall time — 80 105 Eon Turn-On Switching Loss — 1880 — IC = 20A, VCC = 600V, VGE=15V Eoff Turn-Off Switching Loss — 1140 — μJRG=10Ω, L=200uH, LS=150nH, TJ = 175°C eà Etotal Total Switching Loss — 3020 — Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 25 — Diode clamp the same as IRG7PH35UDPbF tr Rise time — 20 — ns td(off) Turn-Off delay time — 200 — tf Fall time — 200 — Cies Input Capacitance — 1940 — pF VGE = 0V Coes Output Capacitance — 60 — VCC = 30V Cres Reverse Transfer Capacitance — 40 — f = 1.0Mhz TJ = 175°C, IC = 80A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 960V, Vp =1200V Rg = 10 Ω, VGE = +20V to 0V Conditions |
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