 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
AUIRFR024N Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
|
||||||||||||||||||||||||||||||
AUIRFR024N Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
|
|
2 / 13 page  AUIRFR/U024N 2 www.irf.com Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.075 Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 4.5 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 25 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Total Gate Charge ––– ––– 20 Qgs Gate-to-Source Charge ––– ––– 5.3 nC Qgd Gate-to-Drain ("Miller") Charge ––– ––– 7.6 td(on) Turn-On Delay Time ––– 4.9 ––– tr Rise Time –––34––– td(off) Turn-Off Delay Time ––– 19 ––– ns tf Fall Time –––27––– LD Internal Drain Inductance Between lead, nH 6mm (0.25in.) LS Internal Source Inductance from package and center of die contact Ãg Ciss Input Capacitance ––– 370 ––– Coss Output Capacitance ––– 140 ––– Crss Reverse Transfer Capacitance ––– 65 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) A ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 56 83 ns Qrr Reverse Recovery Charge ––– 120 180 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) pF ––– ––– ––– ––– 17 g 68 ––– ––– ––– ––– 4.5 7.5 VGS = 10V,See Fig 6 and 13 fh VDD = 28V ID = 10A RG = 24 Ω, TJ = 25°C, IS = 10A, VGS = 0V f TJ = 25°C, IF = 10A di/dt = 100A/µs fh Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 10A f VDS = VGS, ID = 250µA VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150°C MOSFET symbol showing the integral reverse p-n junction diode. VDS = 25V, ID = 10A h ID = 10A VDS = 44V Conditions RD = 2.6 Ω, See Fig.10Ãfh VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig.5 VGS = 20V VGS = -20V S D G S D G Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) VDD = 25V, starting TJ = 25°C, L = 1mH, RG = 25Ω, IAS = 10A. (See Figure 12) ISD ≤ 10A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact . Uses IRFZ24N data and test conditions. Notes: ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 |
Similar Part No. - AUIRFR024N |
|
Similar Description - AUIRFR024N |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
