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AUIRF1324WL Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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AUIRF1324WL Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 11 page  AUIRF1324WL 2 www.irf.com Notes: Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 240A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140 http://www.irf.com/technical-info/appnotes/an-1140.pdf Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.028mH RG = 50, IAS = 195A, VGS =10V. Part not recommended for use above this value. S D G ISD 195A, di/dt 600A/μs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400μs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 24 ––– ––– V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.16 1.30 m VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 210 ––– ––– S RG Internal Gate Resistance ––– 2.4 ––– IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 Gate-to-Source Reverse Leakage ––– ––– -200 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– 120 180 Qgs Gate-to-Source Charge ––– 58 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 36 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 84 ––– td(on) Turn-On Delay Time ––– 18 ––– tr Rise Time ––– 200 ––– td(off) Turn-Off Delay Time ––– 75 ––– tf Fall Time ––– 110 ––– Ciss Input Capacitance ––– 7630 ––– Coss Output Capacitance ––– 3390 ––– Crss Reverse Transfer Capacitance ––– 1960 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 4660 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 4685 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 382 (Body Diode) ISM Pulsed Source Current ––– ––– 1530 (Body Diode)Ãd VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 46 69 TJ = 25°C VR = 20V, ––– 45 68 TJ = 125°C IF = 195A Qrr Reverse Recovery Charge ––– 395 593 TJ = 25°C di/dt = 100A/μs g ––– 345 518 TJ = 125°C IRRM Reverse Recovery Current ––– 1.9 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ID = 195A RG = 2.7 VGS = 10V g VDD = 16V ID = 195A, VDS =0V, VGS = 10V g TJ = 25°C, IS = 195A, VGS = 0V g integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 5mA g VGS = 10V, ID = 195A g VDS = VGS, ID = 250μA VDS = 24V, VGS = 0V VDS = 19V, VGS = 0V, TJ = 125°C MOSFET symbol showing the VDS =12V Conditions VGS = 10V g VGS = 0V VDS = 19V ƒ = 1.0MHz, See Fig.5 VGS = 0V, VDS = 0V to 19V i, See Fig.11 VGS = 0V, VDS = 0V to 19V hà Conditions VDS = 10V, ID = 195A ID = 195A VGS = 20V VGS = -20V nA μA nC ns pF A ns nC |
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