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IRG7PH35UDPBF Datasheet(PDF) 6 Page - International Rectifier

Part # IRG7PH35UDPBF
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG7PH35UDPBF Datasheet(HTML) 6 Page - International Rectifier

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IRG7PH35UDPbF/IRG7PH35UD-EP
6
www.irf.com
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 20A; TJ = 150°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; TJ = 150°C
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 150°C
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 150°C
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 150°C
10
15
20
25
30
35
40
IF (A)
10
20
30
40
50
60
RG = 5.0Ω
RG = 10Ω
RG = 100Ω
RG = 47Ω
0
200 400 600 800 10001200140016001800
diF /dt (A/µs)
0
1000
2000
3000
4000
5000
6000
5.0Ω
10Ω
100Ω
47Ω 20A
40A
10A
10
15
20
25
30
35
40
IF (A)
0
500
1000
1500
2000
RG = 5.0Ω
RG = 10Ω
RG = 47Ω
RG = 100Ω
Fig. 23 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
200 400
600 800 1000 1200 1400 1600
diF /dt (A/µs)
20
25
30
35
40
45
50
55
0
20
40
60
80
100
RG (Ω)
20
25
30
35
40
45
50
25
50
75
100
125
150
175
TJ , Temperature (°C)
1.0
2.0
3.0
4.0
5.0
IC = 600µA


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