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NCP716MT50TBG Datasheet(PDF) 8 Page - ON Semiconductor |
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NCP716MT50TBG Datasheet(HTML) 8 Page - ON Semiconductor |
8 / 17 page NCP716 http://onsemi.com 8 Table 9. ELECTRICAL CHARACTERISTICS Voltage version 3.3 V −40°C ≤ TJ ≤ 125°C; VIN = 4.3 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 25) Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage 0 < IOUT < 80 mA VIN 4.3 24 V Output Voltage Accuracy 4.3 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 3.234 3.3 3.366 V Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 4 10 mV Load Regulation IOUT = 0 mA to 80 mA RegLOAD 10 30 mV Dropout voltage (Note 23) VDO = VIN – (VOUT(NOM) – 99 mV) IOUT = 80 mA VDO 350 560 mV Maximum Output Current (Note 26) IOUT 110 mA Ground current 0 < IOUT < 80 mA, −40 < TA < 85°C IGND 3.2 4.2 mA 0 < IOUT < 80 mA, VIN = 24 V 5.8 mA Power Supply Rejection Ratio VIN = 4.3 V, VOUT = 3.3 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz PSRR 60 dB Output Noise Voltage VOUT = 4.3 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 200 mVrms Thermal Shutdown Temperature (Note 24) Temperature increasing from TJ = +25°C TSD 155 °C Thermal Shutdown Hysteresis (Note 24) Temperature falling from TSD TSDH − 25 − °C 23.Characterized when VOUT falls 99 mV below the regulated voltage and only for devices with VOUT = 3.3 V 24.Guaranteed by design and characterization. 25.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 26.Respect SOA |
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