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NCP715MX18TBG Datasheet(PDF) 8 Page - ON Semiconductor |
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NCP715MX18TBG Datasheet(HTML) 8 Page - ON Semiconductor |
8 / 20 page NCP715 http://onsemi.com 8 ELECTRICAL CHARACTERISTICS − Voltage Version 3.0 V −40°C ≤ TJ ≤ 125°C; VIN = 4.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 21) Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage 0 < IOUT < 50 mA VIN 4.0 24 V Output Voltage Accuracy 4.0 V < VIN < 24 V, 0< IOUT < 50 mA VOUT 2.94 3.0 3.06 V Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 3 mV Load Regulation IOUT = 0 mA to 50 mA RegLOAD 10 mV Dropout voltage (Note 19) VDO = VIN – (VOUT(NOM) – 90 mV) IOUT = 50 mA VDO 250 400 mV Maximum Output Current (Note 22) IOUT 100 200 mA Ground current 0 < IOUT < 50 mA, -40 < TA < 85°C IGND 3.2 4.2 mA 0 < IOUT < 50 mA, VIN = 24 V 5.8 mA Power Supply Rejection Ratio VIN = 4.0 V, VOUT = 3.0 V VPP = 100 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz PSRR 60 dB Output Noise Voltage VOUT = 3 V, IOUT = 50 mA, f = 200 Hz to 100 kHz, COUT = 10 mF VN 135 mVrms Thermal Shutdown Temperature (Note 20) Temperature increasing from TJ = +25°C TSD 170 °C Thermal Shutdown Hysteresis (Note 20) Temperature falling from TSD TSDH - 25 - °C 19.Characterized when VOUT falls 90 mV below the regulated voltage and only for devices with VOUT = 3.0 V 20.Guaranteed by design and characterization. 21.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 22.Respect SOA |
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