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IRG4PH40UDPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG4PH40UDPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRG4PH40UDPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 86 130 IC = 21A Qge Gate - Emitter Charge (turn-on) 13 20 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) 29 44 VGE = 15V td(on) Turn-On Delay Time 46 TJ = 25°C tr Rise Time 35 ns IC = 21A, VCC = 800V td(off) Turn-Off Delay Time 97 150 VGE = 15V, RG = 10Ω tf Fall Time 240 360 Energy losses include "tail" and Eon Turn-On Switching Loss 1.80 diode reverse recovery. Eoff Turn-Off Switching Loss 1.93 mJ See Fig. 9, 10, 18 Ets Total Switching Loss 3.73 4.6 td(on) Turn-On Delay Time 42 TJ = 150°C, See Fig. 11, 18 tr Rise Time 32 ns IC = 21A, VCC = 800V td(off) Turn-Off Delay Time 240 VGE = 15V, RG = 10Ω tf Fall Time 510 Energy losses include "tail" and Ets Total Switching Loss 7.04 mJ diode reverse recovery. LE Internal Emitter Inductance 13 nH Measured 5mm from package Cies Input Capacitance 1800 VGE = 0V Coes Output Capacitance 120 pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance 18 = 1.0MHz trr Diode Reverse Recovery Time 63 95 ns TJ = 25°C See Fig. 106 160 TJ = 125°C 14 IF = 8.0A Irr Diode Peak Reverse Recovery Current 4.5 8.0 A TJ = 25°C See Fig. 6.2 11 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge 140 380 nC TJ = 25°C See Fig. 335 880 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery 133 A/µsTJ = 25°C See Fig. During tb 85 TJ = 125°C 17 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 V VGE = 0V, IC = 250µA ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage 0.43 V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage 2.43 3.1 IC = 21A VGE = 15V 2.97 V IC = 41A See Fig. 2, 5 2.47 IC = 21A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage -11 mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 16 24 S VCE = 100V, IC = 21A ICES Zero Gate Voltage Collector Current 250 µA VGE = 0V, VCE = 1200V 5000 VGE = 0V, VCE = 1200V, TJ = 150°C VFM Diode Forward Voltage Drop 2.6 3.3 V IC = 8.0A See Fig. 13 2.4 3.1 IC = 8.0A, TJ = 125°C IGES Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) |
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