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NCP571SN12T1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NCP571SN12T1G
Description  150 mA CMOS Low Iq Low Output Voltage Regulator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP571SN12T1G Datasheet(HTML) 2 Page - ON Semiconductor

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NCP571, NCV571
http://onsemi.com
2
TSOP−5 package
1
3
NC
Vin
2
GND
Enable
4
Vout
5
(Top View)
DFN6 package
1
3
Enable
Vout
2
NC
GND
4
Vin
6
(Top View)
EP
5 NC
PIN CONNECTIONS
PIN FUNCTION DESCRIPTION
DFN6
TSOP−5
Pin Name
Description
1
5
Vout
Regulated output voltage.
2
4
NC
No Internal Connection. It is recommended to connect this pin to GND potential.
3
2
GND
Power supply ground.
4
3
Enable
This input is used to place the device into low−power standby. When this input is
pulled low, the device is disabled. If this function is not used, Enable pin should be
connected to Vin.
5
NC
No Internal Connection. It is recommended to connect this pin to GND potential.
6
1
Vin
Positive power supply input voltage.
EP
EP
No Internal Connection. It is recommended to connect this pin to GND potential.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage
Vin
0 to 12
V
Enable Voltage
VEN
−0.3 to Vin + 0.3
V
Output Voltage
Vout
−0.3 to Vin + 0.3
V
Power Dissipation
PD
Internally Limited
W
Operating Junction Temperature
TJ
+150
°C
Operating Ambient Temperature
NCP571
NCV571
TA
−40 to +85
−40 to +125
°C
Storage Temperature
Tstg
−55 to +150
°C
ESD Capability, Human Body Model (Note 1)
ESDHBM
2000
V
ESD Capability, Machine Mode (Note 1)
ESDMM
200
V
ESD Capability, Charged Device Model (Note 1)
ESDCDM
1000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
ESD Charged Device Model tested per EIA/JES D22/C101, Field Induced Charge Model (Jedec Standard)
2. Latchup capability (85
°C) $100 mA DC with trigger voltage.
THERMAL CHARACTERISTICS
Rating
Symbol
Test Conditions
Typical Value
Unit
Junction−to−Ambient
TSOP−5
RqJA
1 oz Copper Thickness, 100 mm2
250
°C/W
PSIJ−Lead 2
TSOP−5
YJ−L2
1 oz Copper Thickness, 100 mm2
68
°C/W
Junction−to−Ambient
DFN6
RqJA
1 oz Copper Thickness, 100 mm2
190
°C/W
PSIJ−Lead 2
DFN6
YJ−L2
1 oz Copper Thickness, 100 mm2
84
°C/W
NOTE:
Single component mounted on an 80 x 80 x 1.5 mm FR4 PCB with stated copper head spreading area. Using the following
boundary conditions as stated in EIA/JESD 51−1, 2, 3, 7, 12.


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