NSV60101DMTWTBG datasheet(2/6 Pages) ONSEMI

Part #	NSV60101DMTWTBG

Description	60 V, 1 A, Low VCE(sat) NPN Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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NSS60101DMT

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Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = 10 mA, IB = 0)

V(BR)CEO

60

V

Collector−Base Breakdown Voltage (Ic = 0.1 mA, IE = 0)

V(BR)CBO

80

V

Emitter−Base Breakdown Voltage (IE = 0.1 mA, IC = 0)

V(BR)EBO

6

V

Collector Cutoff Current (VCB = 60 V, IE = 0)

ICBO

100

nA

Emitter Cutoff Current (VBE = 5.0 V)

IEBO

100

nA

ON CHARACTERISTICS

DC Current Gain (Note 4)

(IC = 100 mA, VCE = 2.0 V)

(IC = 500 mA, VCE = 2.0 V)

(IC = 1 A, VCE = 2.0 V)

(IC = 2 A, VCE = 2.0 V

hFE

150

120

90

35

250

240

180

55

Collector−Emitter Saturation Voltage (Note 4)

(IC = 500 mA, IB = 50 mA)

(IC = 1 A, IB = 50 mA)

(IC = 1 A, IB = 100 mA)

VCE(sat)

0.063

0.130

0.115

0.100

0.200

0.180

V

Base

*Emitter Saturation Voltage (Note 4)

(IC = 500 mA, IB = 50 mA)

(IC = 1 A, IB = 50 mA)

(IC = 1 A, IB = 100 mA)

VBE(sat)

1.0

1.1

V

Base−Emitter Turn−on Voltage (Note 4)

(IC = 500 mA, VCE = 2 V)

VBE(on)

0.9

V

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 V, f = 1.0 MHz)

Cobo

10

pF

Cutoff Frequency

(IC = 50 mA, VCE = 2.0 V, f = 100 MHz)

fT

180

MHz

SWITCHING TIMES

Delay Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA)

td

13

ns

Rise Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA)

tr

18

ns

Storage Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA)

ts

700

ns

Fall Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA)

tf

80

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Condition: Pulse Width = 300

msec, Duty Cycle ≤ 2%

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