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NSV60101DMTWTBG Datasheet(PDF) 2 Page - ON Semiconductor |
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NSV60101DMTWTBG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NSS60101DMT www.onsemi.com 2 Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 60 V Collector−Base Breakdown Voltage (Ic = 0.1 mA, IE = 0) V(BR)CBO 80 V Emitter−Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V(BR)EBO 6 V Collector Cutoff Current (VCB = 60 V, IE = 0) ICBO 100 nA Emitter Cutoff Current (VBE = 5.0 V) IEBO 100 nA ON CHARACTERISTICS DC Current Gain (Note 4) (IC = 100 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1 A, VCE = 2.0 V) (IC = 2 A, VCE = 2.0 V hFE 150 120 90 35 250 240 180 55 Collector−Emitter Saturation Voltage (Note 4) (IC = 500 mA, IB = 50 mA) (IC = 1 A, IB = 50 mA) (IC = 1 A, IB = 100 mA) VCE(sat) 0.063 0.130 0.115 0.100 0.200 0.180 V Base *Emitter Saturation Voltage (Note 4) (IC = 500 mA, IB = 50 mA) (IC = 1 A, IB = 50 mA) (IC = 1 A, IB = 100 mA) VBE(sat) 1.0 1.0 1.1 V Base−Emitter Turn−on Voltage (Note 4) (IC = 500 mA, VCE = 2 V) VBE(on) 0.9 V DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 10 pF Cutoff Frequency (IC = 50 mA, VCE = 2.0 V, f = 100 MHz) fT 180 MHz SWITCHING TIMES Delay Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) td 13 ns Rise Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) tr 18 ns Storage Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) ts 700 ns Fall Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) tf 80 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% |
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