NSS60101DMTTBG datasheet(3/6 Pages) ONSEMI

Part #	NSS60101DMTTBG

Description	60 V, 1 A, Low VCE(sat) NPN Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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NSS60101DMT

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TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain

Figure 2. DC Current Gain

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0.001

0

50

100

150

200

300

350

400

10

1

0.1

0.01

0.001

0

50

100

150

200

250

350

400

Figure 3. Collector Current as a Function of

Collector Emitter Voltage

Figure 4. Collector−Emitter Saturation Voltage

VCE, COLLECTOR EMITTER VOLTAGE (V)

IC, COLLECTOR CURRENT (A)

6

5

4

3

2

1

0

0.2

0.6

0.8

1.2

1.6

1.8

2.2

10

1

0.1

0.01

0.001

0.01

0.1

1

Figure 5. Collector−Emitter Saturation Voltage

Figure 6. Base−Emitter Saturation Voltage

IC, COLLECTOR CURRENT (A)

1

0.1

0.01

0.001

0.01

0.1

1

10

0.1

0.01

0.001

0

0.5

1.0

250

VCE = 2 V

150

°C

100

°C

25

°C

−55

°C

300

VCE = 5 V

150

°C

100

°C

25

°C

−55

°C

0.4

1.0

1.4

2.0

IB = 20 mA

2.0 mA

4.0 mA

6.0 mA

8.0 mA

10 mA

12 mA

14 mA

16 mA

18 mA

IC/IB = 50

150

°C

100

°C

25

°C

−55

°C

IC/IB = 100

150

°C

100

°C

25

°C

−55

°C

150

°C

100

°C

25

°C

−55

°C

450

1

IC/IB = 20

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