NSS60100DMTTBG datasheet(1/6 Pages) ONSEMI

Part #	NSS60100DMTTBG

Description	60 V, 1 A, Low VCE(sat) PNP Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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November, 2014 − Rev. 1

1

Publication Order Number:

NSS60100DMT/D

NSS60100DMT

60 V, 1 A, Low VCE(sat) PNP

Transistors

ON Semiconductor’s e2PowerEdge family of low VCE(sat)

transistors are miniature surface mount devices featuring ultra low

saturation voltage (VCE(sat)) and high current gain capability. These

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

Typical applications are DC−DC converters and LED lightning,

power management

…etc. In the automotive industry they can be used

in air bag deployment and in the instrument cluster. The high current

gain allows e2PowerEdge devices to be driven directly from PMU’s

control outputs, and the Linear Gain (Beta) makes them ideal

components in analog amplifiers.

Features

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• NSV60100DMTWTBG − Wettable Flanks Device

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Max

Unit

Collector−Emitter Voltage

VCEO

60

Vdc

Collector−Base Voltage

VCBO

60

Vdc

Emitter−Base Voltage

VEBO

6

Vdc

Collector Current − Continuous

IC

1

A

Collector Current − Peak

ICM

2

A

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance Junction−to−Ambient

(Notes 1 and 2)

RqJA

55

°C/W

Total Power Dissipation per Package @

TA = 25°C (Note 2)

PD

2.27

W

Thermal Resistance Junction−to−Ambient

(Note 3)

RqJA

69

°C/W

Power Dissipation per Transistor @ TA = 25°C

(Note 3)

PD

1.8

W

Junction and Storage Temperature Range

TJ, Tstg

−55 to

+150

°C

1. Per JESD51−7 with 100 mm2 pad area and 2 oz. Cu (Dual Operation).

2. PD per Transistor when both are turned on is one half of Total PD or 1.13 Watts.

3. Per JESD51−7 with 100 mm2 pad area and 2 oz. Cu (Single−Operation).

AP = Specific Device Code

M

= Date Code

G

= Pb−Free Package

AP M

G

1

2

3

6

5

4

WDFN6

CASE 506AN

MARKING

DIAGRAM

1

PIN CONNECTIONS

Device

Package

Shipping†

ORDERING INFORMATION

NSS60100DMTTBG

WDFN6

(Pb−Free)

3000/Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

NSV60100DMTWTBG

WDFN6

(Pb−Free)

3000/Tape &

Reel

60 Volt, 1 Amp

PNP Low VCE(sat) Transistors

www.onsemi.com

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