NSS40302PDR2G_15 datasheet(1/9 Pages) ONSEMI

Part #	NSS40302PDR2G

Description	Complementary 40 V, 6.0 A, Low VCE(sat) Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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May, 2015 − Rev. 2

1

Publication Order Number:

NSS40302P/D

NSS40302PDR2G

Complementary 40 V, 6.0 A,

Low VCE(sat) Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat)

transistors are surface mount devices featuring ultra low saturation

voltage (VCE(sat)) and high current gain capability. These are designed

for use in low voltage, high speed switching applications where

affordable efficient energy control is important.

Typical applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e2PowerEdge devices to be

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

Features

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

NPN

PNP

VCEO

40

−40

Vdc

Collector-Base Voltage

NPN

PNP

VCBO

40

−40

Vdc

Emitter-Base Voltage

NPN

PNP

VEBO

6.0

−7.0

Vdc

Collector Current − Continuous

NPN

PNP

IC

3.0

−3.0

A

Collector Current − Peak

NPN

PNP

ICM

6.0

−6.0

A

Electrostatic Discharge

ESD

HBM Class 3B

MM Class C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Device

Package

Shipping†

ORDERING INFORMATION

NSS40302PDR2G

SOIC−8

(Pb−Free)

2500 /

Tape & Reel

DEVICE MARKING

SOIC−8

CASE 751

STYLE 16

www.onsemi.com

40 VOLTS, 6.0 AMPS

COMPLEMENTARY LOW

VCE(sat) TRANSISTOR

EQUIVALENT RDS(on) 80 mW

COLLECTOR

7,8

2

BASE

1

EMITTER

COLLECTOR

5,6

4

BASE

3

EMITTER

1

8

C40302

AYWW

G

1

8

C40302 = Specific Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

NSV40302PDR2G

SOIC−8

(Pb−Free)

2500 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

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