NSS1C201MZ4T1G datasheet(4/6 Pages) ONSEMI

Part #	NSS1C201MZ4T1G

Description	100 V, 2.0 A, Low VCE(sat) NPN Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NSS1C201MZ4

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4

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0.001

0.01

0.1

1

10

Figure 7. Base−Emitter Saturation Voltage

IC, COLLECTOR CURRENT (A)

IC /IB = 50

25°C

150°C

−55°C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.001

0.01

0.1

1

10

Figure 8. Base−Emitter Voltage

IC, COLLECTOR CURRENT (A)

150°C

25°C

−55°C

VCE = 2 V

0.01

0.10

1.00

0.0001

0.001

0.01

0.1

1

Figure 9. Collector Saturation Region

IB, BASE CURRENT (A)

TJ = 25°C

IC = 0.1 A

0.5 A

1 A

2 A

3 A

0

50

100

150

200

250

300

350

400

01

23

4

5

67

8

Figure 10. Input Capacitance

VEB, BASE−EMITTER VOLTAGE (V)

TJ = 25°C

fTEST = 1 MHz

0

5

10

15

20

25

30

35

40

45

50

0

10

2030

405060

7080

90

100

Figure 11. Output Capacitance

VCB, COLLECTOR BASE VOLTAGE (V)

TJ = 25°C

fTEST = 1 MHz

0

20

40

60

80

100

120

0.001

0.01

0.1

1

10

Figure 12. Current Gain Bandwidth Product

IC, COLLECTOR CURRENT (A)

TJ = 25°C

fTEST = 1 MHz

VCE = 5 V

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