NSS1C201L_14 datasheet(4/6 Pages) ONSEMI

Part #	NSS1C201L

Description	100 V, 3.0 A, Low VCE(sat) Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NSS1C201L, NSV1C201L

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TYPICAL CHARACTERISTICS

Figure 8. Base Emitter Voltage

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0.001

0.2

0.4

0.6

0.8

1.0

1.2

VCE = 2 V

150

°C

−55

°C

25

°C

Figure 9. Collector Saturation Region

Figure 10. Input Capacitance

IB, BASE CURRENT (A)

VEB, EMITTER BASE VOLTAGE (V)

1

0.1

0.01

0.001

0.0001

0.01

0.1

1

7

6

5

4

3

2

1

0

50

100

150

200

300

350

400

Figure 11. Output Capacitance

Figure 12. Current−Gain Bandwidth Product

VCB, COLLECTOR BASE VOLTAGE (V)

IC, COLLECTOR CURRENT (A)

90

80

50

40

30

20

10

0

5

10

20

30

35

40

50

1

0.1

0.01

0.001

0

20

40

60

80

100

120

140

Figure 13. Safe Operating Area

VCE, COLLECTOR EMITTER VOLTAGE (V)

100

10

1

0.1

0.01

0.1

1

10

IC = 0.1 A

0.5 A

1 A

2 A

3 A

8

250

TJ = 25°C

fTEST = 1 MHz

60

70

100

15

25

45

TJ = 25°C

fTEST = 1 MHz

TJ = 25°C

fTEST = 1 MHz

VCE = 2 V

10 mS

1 mS

100 mS

Thermal Limit

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